鈥?/div>
P
OUT
= 30 W with 10 dB gain @ 2000 MHz
DESCRIPTION
The PD60030 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies of
up to 2 GHz. PD60030 boasts the excellent gain, lin-
earity and reliability of ST鈥檚 latest LDMOS technolo-
gy mounted in the first true SMD plastic RF power
package, PowerSO-10RF. PD60030鈥檚 superior lin-
earity performance makes it an ideal solution for
base station applications.
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially opti-
mized for RF needs and offers excellent RF perfor-
mances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD60030
BRANDING
PD60030
PowerSO-10RF
(straight lead)
ORDER CODE
PD60030S
BRANDING
PD60030S
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
擄
C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
鹵
20
TBD
TBD
165
-65 to +175
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
(T
CASE
= 70
擄
C)
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
November, 20 2001
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