鈥?/div>
P
OUT
= 4 W with 11 dB gain @ 2000 MHz
DESCRIPTION
The PD60004 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies of
up to 2 GHz. PD60004 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD60004鈥檚 su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD60004
BRANDING
PD60004
PowerSO-10RF
(straight lead)
ORDER CODE
PD60004S
BRANDING
PD60004S
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
鹵
20
TBD
TBD
165
-65 to +175
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
(T
CASE
= 70
擄
C)
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
November, 20 2001
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