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(5x5)
DESCRIPTION
The PD57006-01 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57006-01 boasts the excellent
gain, linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT鈩?
It is ideal for digital cellular BTS applications
requiring high linearity.
ORDER CODE
PD57006-01
BRANDING
PD57006-01
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 2\5
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
鹵
20
1
TBD
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
February, 21 2002
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