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(5x5)
DESCRIPTION
The PD57002-01 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The PD57002-01 is designed for high gain
and broadband performance operating in common
source mode at 28 V. PD57002-01 boasts the
excellent gain, linearity and reliability of ST鈥檚 latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT鈩?
It is ideal for digital cellular BTS applications
requiring high linearity.
ORDER CODE
PD57002-01
BRANDING
PD57002-01
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
鹵
20
0.25
TBD
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
February, 21 2002
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