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PD55008L Datasheet

  • PD55008L

  • RF POWER TRANSISTORS The LdmoST Plastic FAMILY

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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PD55008L
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
ADVANCED DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 8 W with 17 dB gain @ 500 MHz / 12.5V
鈥?/div>
INTEGRATED ESD PROTECTION
鈥?/div>
NEW LEADLESS PLASTIC PACKAGE
鈥?/div>
SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLAT
鈩?/div>
(5x5)
ORDER CODE
PD55008L
BRANDING
55008
DESCRIPTION
The PD55008L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008L boasts the excellent gain, linearity and
reliability of STH1LV latest LDMOS technology
mounted in the innovative leadless SMD plastic
package, PowerFLAT鈩? PD55008L鈥檚 superior
linearity performance makes it an ideal solution for
car mobile radio.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
40
-0.5 to 15
5
19.5
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
4.1
擄C/W
May, 29 2003
1/9

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