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PD54003-01 Datasheet

  • PD54003-01

  • TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 4A I(D) | L...

  • 42.49KB

  • 4頁

  • ETC

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PD54003-01
RF POWER TRANSISTORS
The
LdmoST
PLASTIC FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 3 W WITH 12 dB gain @ 500 MHz
鈥?/div>
NEW LEADLESS PLASTIC PACKAGE
PowerFLAT
鈩?/div>
(5x5)
ORDER CODE
PD54003-01
BRANDING
PD54003-01
DESCRIPTION
The PD54003-01 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7 V in common source mode at frequencies of
up to 1 GHz. PD54003-01 boasts the excellent
gain, linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT鈩?
PD54003-01鈥檚 superior linearity performance
makes it an ideal solution for portable radio.
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
25
鹵
20
4
TBD
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
February, 21 2002
1/4

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