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PD25HB160 Datasheet

  • PD25HB160

  • THYRISTOR MODULE

  • 2頁

  • SANREX

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THYRISTOR MODULE
PK
(PD,PE,KK)
25HB
UL;E76102 M錛?/div>
錛?/div>
Power Thyristor/Diode Module
PK25HB
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. and electrically isolated mounting base make
your mechanical design easy.
鈼?/div>
I
T(AV)
25A, I
T(RMS)
39A, I
TSM
500A
26MAX
3
93.5MAX
80
2
+
鈥?/div>
1
K2
G2
2- 6.5
13
100 A/渭s
鈼?/div>
dv/dt 500V/渭s
錛圓pplications錛?/div>
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
鈼?/div>
di/dt
Internal Configurations
K2
G2
3
2
16.5
23
23
A1K2
錛圞2錛?/div>
K1
錛圓2錛?G1
1
K2
G2
3
2
K1
G1
~
3-M5
110TAB
30MAX
A1K2
錛圞2錛?/div>
K1
錛圓2錛?/div>
1
PK
K2
3
2
2
PE
K2
G2
K1
錛圓2錛?G1
1
A1K2
錛圞2錛?/div>
K1
錛圓2錛?G1
1
1
錛圓1錛?/div>
21
PD
KK
Unit錛?/div>
A
鈻燤aximum
Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
錛奟epetitive
Peak Reverse Voltage
錛奛on-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
PK25HB120 PD25HB120
KK25HB120 PE25HB120
1200
1350
1200
Conditions
Single phase, half wave, 180擄
conduction, Tc錛?4鈩?/div>
Single phase, half wave, 180擄
conduction, Tc錛?4鈩?/div>
1
cycle,
錛?/div>
2
PK25HB160 PD25HB160
KK25HB160 PE25HB160
1600
1700
1600
Ratings
25
39
450/500
1000
10
1
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
渭s
V
鈩?/div>
鈩?/div>
N錕?frac12;錕斤拷½錕?/div>
錛堛帍f錕?frac12;錕紹錛?/div>
g
錛?/div>
I
T AV錛?/div>
錛夾verage
On-State Current
錛?/div>
I
T RMS錛?/div>
錛奟.M.S.
On-State Current
I
TSM
I
2
t
P
GM
錛圓V錛?/div>
P
G
錛奡urge
On-State Current
錛奍
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
錛奍solation
Breakdown Voltage (R.M.S.)
錛奜perating
Junction Temperature
錛奡torage
Temperature
Mounting
Torque
Mass
Mounting
錛圡6錛?/div>
Terminal錛圡5錛?/div>
50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di錛廳t
V
ISO
Tj
Tstg
I
G
錛?00mA錛?/div>
Tj錛?5鈩冿紝
D
錛?/div>
1 2
V
DRM
錛?/div>
G
/dt錛?.1A/
V
錛?/div>
dI
渭s
A.C.1minute
100
2500
鈭?0 to 錛?25
鈭?0 to 錛?25
Recommended Value 2.5-3.9錛?5-40錛?/div>
Recommended Value 1.5-2.5錛?5-25錛?/div>
4.7錛?48錛?/div>
2.7錛?8錛?/div>
170
鈻燛lectrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
錛廣
GT
V
GD
tgt
dv錛廳t
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
錛奟epetitive
Peak Reverse Current, max.
錛奝eak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj錛?25鈩?/div>
at V
DRM
, single phase, half wave, Tj錛?25鈩?/div>
On-State Current 75A, Tj錛?25鈩?Inst. measurement
Tj錛?5鈩冿紝I
T
錛?A錛孷
D
錛?V
Tj錛?25鈩冿紝V
D
錛?/div>
1 2
V
DRM
錛?/div>
I
T
錛?5A錛?/div>
G
錛?00mA錛?/div>
I
Tj錛?5鈩冿紝
D
錛?/div>
1 2
V
DRM
錛?/div>
G
/dt錛?.1A/
V
錛?/div>
dI
渭s
Tj錛?25鈩? V
D
錛?/div>
2 3
V
DRM
, Exponential wave.
錛?/div>
Tj錛?5鈩?/div>
Tj錛?5鈩?/div>
Junction to case
Ratings
4
4
1.60
50/2
0.25
10
500
50
100
0.80
Unit
mA
mA
V
mA/V
V
渭s
V/
渭s
mA
mA
鈩?W
Rth j-c錛夛紛Thermal Impedance, max.
錛?/div>
錛妋ark錛歍hyristor
and Diode part. No mark錛歍hyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

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