PHOTO DIODES
2.4; 3.6
碌
m
Model PD23-02
鈥hotodiodes
PD23-02
are designed for detecting the radiation in the Middle
Infrared spectral range from 800 to 2300 nm. Heterostructures with the InGaAsSb
sensitive layer and the AlGaAsSb "window" are grown on GaSb substrates.
鈥hotodiodes
PD23-02
are mounted in standard 5.4 mm package TO-18. They have
the photosensitive area with diameter of 200
碌m.
Fast response makes possible
their use for the detection of high frequency modulated laser or LED emission.
鈥elated products:
PD23-02
can be used in optical pair with our
LED16梅LED23
and
LD200梅LD230.
We offer the preamplifier model
AM-04
suitable for
PD23-02.
2.3
碌
m 0.2 mm
Package TO-18
Parameters
Cut-off wavelength,
碌m
(at 10%)
Responsivity, A/W (位=1.95梅2.1碌m)
Dark Current,
碌A(chǔ)
( V= - 0.2 V )
( V= - 0.5 V )
( V= - 1.0 V )
Impedance, kOhm
Capacitance, pF
Detectivity,
cm.Hz
Range,
o
C
Sensitive area diameter,
碌m
Soldering temperature
Package
1/2
Min
2.30
0.9
0.5
1.0
1.5
30
10
1
Typ
2.30
1.0
1.0
2.0
3.0
60
20
3
Max
2.35
1.1
2.0
3.0
5.0
100
30
5
(V= -10 mV)
(V=0, f=1 MHz)
Rise and Fall Time, ns (V=0, 50 Ohm)
/W (位p,1000,1)
4.10
10
5.10
10
8.10
10
Operating Temperature
-40梅+50
200
260
o
C
TO-18
PD23-02
Spectral Response
Typical characteristic t= + 25C
AlGaAsSb
100
Basic Circuit Connections
C
f
R
f
I
ph
PD23-02
0,8
Response, A/W
PD23
80
60
40
20
0
GaSb
(substr.)
GaInAsSb
Output voltage
Wavelength, mm
1,3
1,8
2,3
V
out
= -
(I
ph
*R
f
)
PD23-02
Capacitance vs. Reverse Voltage
18
16
PD23-02
10
1
Typical characteristic
Spectral Response
t= + 20C
Typical characteristic
PD23-
100
Temperature dependance of cut-off
Typical characteristics
T= 300 K
Dark Current,
碌
A
T=+23 C
80
Responce, arb.un.
60
40
20
0
T= - 43 C
T= - 113 C
Capacity, pF
14
12
10
8
0
0,2
0,4
0,6
0,8
1
0,1
0,01
0,001
T=300 K
T=230 K
T=160 K
0,0001
0
0,5
1
1,5
2
2,5
3
1,6
1,8
Reverse Voltage (V)
Reverse bias, U, Volts
2
2,2
2,4
Wavelength,
碌
m
2,6
2,8
1
