PCG3N60C3W
PRELIMINARY
January 2002
6A, 600V, UFS Series N-Channel IGBTs
Symbol
C
Features
鈥?6A, 600V at T
C
= 25
o
C
鈥?600V Switching SOA Capability
G
Formerly developmental type TA49113.
E
Electrical Speci鏗乧ations
PARAMETER
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
TEST CONDITIONS
I
C
= 250
碌
A, V
GE
= 0V
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250
碌
A,
V
CE
= V
GE
V
GE
=
鹵
25V
T
C
= 25
o
C
T
C
= 25
o
C
T
C
= 25
o
C
MIN
600
-
-
3.0
-
TYP
-
-
1.65
5.5
-
MAX
-
250
2.0
6.0
鹵
250
UNITS
V
碌
A
V
V
nA
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Die Characteristics
DIE DIMENSIONS:
74
mils x
98
mils x 14 mils
WAFER DIAMETER:
5in with Standard Flat
PASSIVATION:
Nitride Thickness: 17k
脜
鹵
1.5k
脜
FRONTSIDE METALLIZATION:
Type: Al
Metallization Mask Layout
PCG3N60C3W
漏2002 Fairchild Semiconductor Corporation
PCG3N60C3W Rev. B
1
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