Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
PBYR745X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
PARAMETER
PBYR7-
Repetitive peak reverse
voltage
Forward voltage
Average forward current
MAX.
35X
35
0.57
7.5
MAX.
40X
40
0.57
7.5
MAX.
45X
45
0.57
7.5
UNIT
V
V
A
PINNING - SOD113
PIN
1
2
DESCRIPTION
cathode
anode
PIN CONFIGURATION
case
SYMBOL
k
1
a
2
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
35
35
MAX.
-40
40
40
40
7.5
10.6
15
100
110
-45
45
45
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
hs
鈮?/div>
128 藲C
Average forward current
square wave;
未
= 0.5;
T
hs
鈮?/div>
123 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
RMS output current
Repetitive peak forward current t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
123 藲C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal T
j
= 125 藲C prior
to surge; with reapplied
V
RRM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
Non-repetitive peak reverse
t
p
= 100
碌s
current
Storage temperature
Operating junction temperature
-
-
-
-65
-
50
1
1
175
150
A
2
s
A
A
藲C
藲C
August 1996
1
Rev 1.000
1
2
3
4
5
