Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
low forward voltage drop and
absence of stored charge. These
devices can withstand reverse
voltage
transients
and
have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PBYR3045PTF series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
MAX.
MAX.
MAX.
45PTF
45
0.65
20
UNIT
V
V
A
35PTF 40PTF
35
40
0.65
20
0.65
20
PINNING - SOT199
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1
2
3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
35
35
MAX.
-40
40
40
40
20
20
30
135
150
-45
45
45
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
hs
鈮?/div>
113 藲C
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
square wave;
未
= 0.5;
T
hs
鈮?/div>
109 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
109 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 藲C prior
to surge; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode.
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode.
Storage temperature
Operating junction temperature
-
-
-
-65
-
91
2
2
175
150
A
2
s
A
A
藲C
藲C
August 1996
1
Rev 1.100
1
2
3
4
5
