Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual nickel silicide schottky barrier
rectifier diodes in a plastic envelope
featuring low forward voltage drop
and absence of stored charge. These
devices can withstand reverse
voltage
transients
and
have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
PBYR2525CT series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
PBYR25-
Repetitive peak reverse
voltage
Forward voltage
Average output current (both
diodes conducting)
MAX.
20CT
20
0.41
30
MAX.
25CT
25
0.41
30
UNIT
V
V
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
1
k2
1 23
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-20
20
20
20
30
43
30
180
200
MAX.
-25
25
25
25
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
鈮?/div>
109 藲C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
square wave;
未
= 0.5;
T
mb
鈮?/div>
135 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
135 藲C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 藲C prior
to surge; with reapplied
V
RRM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode
Storage temperature
Operating junction temperature
-
-
-
-65
-
162
2
2
175
150
A
2
s
A
A
藲C
藲C
January 1997
1
Rev 1.000
1
2
3
4
5
