Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a plastic
envelope featuring low forward
voltage drop and absence of stored
charge. These devices can withstand
reverse voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PBYR2045CT series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
PBYR20-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
MAX.
35CT
35
0.57
20
MAX.
40CT
40
0.57
20
MAX.
45CT
45
0.57
20
UNIT
V
V
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
a2
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
35
35
MAX.
-40
40
40
40
20
28
20
135
150
-45
45
45
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
鈮?/div>
143 藲C
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
square wave;
未
= 0.5;
T
mb
鈮?/div>
136 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
136 藲C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 藲C prior
to surge; with reapplied
V
RWM(max)
2
I t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode.
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode.
Storage temperature
Operating junction temperature
-
-
-
-65
-
91
1
1
175
150
A
2
s
A
A
藲C
藲C
October 1994
1
Rev 1.100
1
2
3
4
5
