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PBSS8110X Datasheet

  • PBSS8110X

  • 100 V, 1 A NPN low VCEsat (BISS) transistor

  • 15頁(yè)

  • PHILIPS

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PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
Rev. 01 鈥?11 May 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
s
s
s
s
SOT89 package
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High ef鏗乧iency leading to less heat generation
1.3 Applications
s
Major application segments:
x
Automotive 42 V power
x
Telecom infrastructure
x
Industrial
s
Peripheral driver:
x
Driver in low supply voltage applications (e.g. lamps and LEDs)
x
Inductive load driver (e.g. relays, buzzers and motors)
s
DC-to-DC converter
1.4 Quick reference data
Table 1:
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
鈮?/div>
1 ms
I
C
= 1 A;
I
B
= 100 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
165
Max
100
1
3
200
Unit
V
A
A
m鈩?/div>
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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