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PBSS5160K Datasheet

  • PBSS5160K

  • 60 V, 1 A PNP low VCEsat (BISS) transistor

  • 14頁

  • PHILIPS

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PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 02 鈥?30 June 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A)
Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
High voltage DC-to-DC conversion
High voltage MOSFET gate driving
High voltage motor control
High voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
鈮?/div>
1 ms
I
C
=
鈭?
A;
I
B
=
鈭?00
mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
255
Max
鈭?0
鈭?
鈭?
340
Unit
V
A
A
m鈩?/div>
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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