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PBSS4350SPN Datasheet

  • PBSS4350SPN

  • 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

  • 14頁

  • PHILIPS

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PBSS5350SS
50 V, 2.7 A PNP/PNP low V
CEsat
(BISS) transistor
Rev. 01 鈥?3 April 2007
Product data sheet
1. Product pro鏗乴e
1.1 General description
PNP/PNP double low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PBSS5350SS
SOT96-1
Name
SO8
NPN/PNP
complement
PBSS4350SPN
NPN/NPN
complement
PBSS4350SS
Type number
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
Dual low power switches (e.g. motors, fans)
I
Automotive
1.4 Quick reference data
Table 2.
Quick reference data
Conditions
open base
single pulse;
t
p
鈮?/div>
1 ms
I
C
=
鈭?
A;
I
B
=
鈭?00
mA
[1]
Symbol Parameter
Per transistor
V
CEO
I
C
I
CM
R
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
95
Max
鈭?0
鈭?.7
鈭?
140
Unit
V
A
A
m鈩?/div>
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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