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PBSS4220V Datasheet

  • PBSS4220V

  • 20 V, 2 A NPN low VCEsat (BISS) transistor

  • 13頁

  • PHILIPS

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PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
Rev. 01 鈥?6 February 2006
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
s
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1:
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
t
p
鈮?/div>
300
碌s
I
C
= 1 A;
I
B
= 100 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
140
Max
20
2
4
175
Unit
V
A
A
m鈩?/div>
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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