PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
Rev. 02 鈥?31 January 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
Low V
CEsat
(BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High ef鏗乧iency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
s
Major application segments:
x
Automotive
x
Telecom infrastructure
x
Industrial
s
Power management:
x
DC-to-DC conversion
x
Supply line switching
s
Peripheral driver
x
Driver in low supply voltage applications (e.g. lamps and LEDs)
x
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
t = 1 ms or limited by T
j(max)
I
C
= 1 A; I
B
= 100 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
200
Max Unit
60
1
2
250
V
A
A
m鈩?/div>
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
Pulse test: t
p