PBSS4160DS
60 V, 1 A NPN/NPN low V
CEsat
(BISS) transistor
Rev. 02 鈥?27 June 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN/NPN low V
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160DS.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
Dual low power switches (e.g. motors, fans)
s
Automotive applications
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse; t
p
鈮?/div>
1 ms
I
C
= 1 A; I
B
= 100 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
200
Max
60
1
2
250
Unit
V
A
A
m鈩?/div>
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Pulse test: t
p