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PBSS303NX Datasheet

  • PBSS303NX

  • 30 V, 5.1 A NPN low VCEsat (BISS) transistor

  • 133.40KB

  • 15頁

  • PHILIPS

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PBSS303NX
30 V, 5.1 A NPN low V
CEsat
(BISS) transistor
Rev. 01 鈥?23 August 2006
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and 鏗俛t lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PX.
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
I
I
I
I
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
鈮?/div>
1 ms
I
C
= 4 A;
I
B
= 200 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
31
Max
30
5.1
10.2
44
Unit
V
A
A
m鈩?/div>
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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