PBSS302PD
40 V PNP low V
CEsat
(BISS) transistor
Rev. 01 鈥?18 April 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS302ND
1.2 Features
s
s
s
s
s
Ultra low collector-emitter saturation voltage V
CEsat
4 A continuous collector current capability I
C
(DC)
Up to 15 A peak current
Very low collector-emitter saturation resistance
High ef鏗乧iency due to less heat generation
1.3 Applications
s
s
s
s
s
s
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited
by T
j(max)
I
C
=
鈭?
A;
I
B
=
鈭?00
mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
55
Max
鈭?0
鈭?
鈭?5
75
Unit
V
A
A
m鈩?/div>
Device mounted on a ceramic Printed-Circuit Board (PCB), AL
2
O
3
, standard footprint.
Pulse test: t
p