PBSS302NZ
20 V, 5.8 A NPN low V
CEsat
(BISS) transistor
Rev. 01 鈥?8 September 2006
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High ef鏗乧iency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
I
I
I
I
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
鈮?/div>
1 ms
I
C
= 4 A;
I
B
= 200 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
30
Max
20
5.8
11.6
43
Unit
V
A
A