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PBRP113ZT Datasheet

  • PBRP113ZT

  • PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW

  • 12頁

  • PHILIPS

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PBRP113ZT
PNP 800 mA, 40 V BISS RET; R1 = 1 k鈩? R2 = 10 k鈩?/div>
Rev. 01 鈥?16 January 2008
Product data sheet
1. Product pro鏗乴e
1.1 General description
800 mA PNP low V
CEsat
Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN113ZT.
1.2 Features
I
800 mA repetitive peak output current
I
High current gain h
FE
I
Built-in bias resistors
I
Simpli鏗乪s circuit design
I
Low collector-emitter saturation voltage
V
CEsat
I
Reduces component count
I
Reduces pick and place costs
I
鹵10
% resistor ratio tolerance
1.3 Applications
I
Digital application in automotive and
industrial segments
I
Medium current peripheral driver
I
Switching loads
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
I
ORM
R1
R2/R1
[1]
[2]
[3]
Quick reference data
Parameter
collector-emitter voltage
output current
repetitive peak output current t
p
鈮?/div>
1 ms;
未 鈮?/div>
0.33
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
[1][2]
[3]
Min
-
-
-
0.7
9
Typ
-
-
-
1
10
Max
鈭?0
鈭?00
鈭?00
1.3
11
Unit
V
mA
mA
k鈩?/div>
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

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