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PBLS6002D Datasheet

  • PBLS6002D

  • 60 V PNP BISS loadswitch

  • 134.09KB

  • 16頁

  • PHILIPS

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PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 鈥?23 June 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
s
s
s
s
s
Low V
CEsat
(BISS) transistor and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
s
s
s
s
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
collector-emitter saturation
resistance
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
I
C
=
鈭?
A;
I
B
=
鈭?00
mA
open base
Conditions
open base
[1]
[2]
Min
-
-
-
Typ
-
-
255
Max
鈭?0
鈭?
340
Unit
V
A
m鈩?/div>
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
[2]
-
-
3.3
0.8
-
-
4.7
1
50
100
6.1
1.2
V
mA
k鈩?/div>
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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