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PBHV8540T

500 V, 0.5 A NPN high-voltage low V

CEsat

(BISS) transistor

Rev. 01 鈥?5 February 2008

Product data sheet

1. Product pro鏗乴e

1.1 General description

NPN high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9040T.

1.2 Features

I

I

I

I

I

High voltage

Low collector-emitter saturation voltage V

CEsat

High collector current capability I

C

and I

CM

High collector current gain (h

FE

) at high I

C

AEC-Q101 quali鏗乪d

1.3 Applications

I

I

I

I

I

I

I

Electronic ballast for 鏗倁orescent lighting

LED driver for LED chain module

LCD backlighting

High Intensity Discharge (HID) front lighting

Automotive motor management

Hook switch for wired telecom

Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

V

CESM

V

CEO

I

C

h

FE

Quick reference data

Parameter

collector-emitter peak voltage

collector-emitter voltage

collector current

DC current gain

V

CE

= 10 V; I

C

= 50 mA

Conditions

V

BE

= 0 V

open base

Min

-

-

-

100

Typ

-

-

-

-

Max

500

400

0.5

-

Unit

V

V

A

next

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