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PA45DIE Datasheet

  • PA45DIE

  • Operational Amplifier

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HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
PA45DIE
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
NO LONGER SUPPORTED FOR DESIGN-IN
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
S
to 鈥揤
S
OUTPUT CURRENT, continuous
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, junction
150V
5A
鹵16V
鹵V
S
150擄C
NOTE:
Because of wafer probing test limitations, full power tests are not possible. Refer to parent
product data sheet PA45 for typical AC, DC and power performance specifications.
DC WAFER PROBED SPECIFICATIONS
PARAMETER
1
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
OFFSET CURRENT, initial
SUPPLY CURRENT, quiescent
COMMON MODE REJECTION
VOLTAGE SWING, positive
VOLTAGE SWING, negative
ALARM, sink current
ALARM, leakage
NOTES:
TEST CONDITIONS
V
S
=
鹵20V
to
鹵75
V
V
S
=
鹵20V
V
S
=
鹵20V
V
S
=
鹵20V
V
S
=
鹵20V
V
CM
=
鹵45V,
V
S
=
鹵75V
V
S
=
鹵50V,
I
O
= 40mA
V
S
=
鹵50V,
I
O
= 鈥?0mA
V
S
=
鹵20V
to
鹵75
V
V
S
=
鹵20V
to
鹵75
V
MIN
MAX
25
25
1
1
26
84
40
鈥?0
90
1
UNITS
mV
碌V/V
nA
nA
mA
dB
V
V
碌A(chǔ)
碌A(chǔ)
D
1. Current limit, I
Q
pin, and shutdown verified as operational.
DIE
LAYOUT
3
4
5
6
220 Mil
5588碌
7
1
2
25
24
23
Recommended wire is 2 mil aluminum. All large bond pads
must be used to avoid excessive current density in the die
metalization.
Pad
Function
鈥?Input
+ Input
Alarm
Shutdown
NC
鈥揤
S
Pad
11-16
17-21
22*
23
24
25
Function
Output Drive
+V
S
I
Q
Compensation
Compensation
Current Limit Sense
11
12
22
21
20
13
8
14
9
15
10
16
220 Mil
5588碌
18
17
19
1
2
3*
4*
5
6-10
Thickness: 11 Mil (280碌)
Backside: Silicon (no back metal)
Small Bond pads: 5 Mil sq (127碌) AI
Large Bond pads: 5 x 11 Mil (127碌 x 280碌) AI
NOTE:
Tie backside to 鈥揤
S
through die attach medium. Rec-
ommended die attach material is either conductive
epoxy or silver-glass. Lowest thermal resistance will
be obtained with silver-glass.
* Pad 3 (Alarm) is tied to a switched current source. When an
over-temperature condition exits the current source turns on
and sinks 90碌A(chǔ) to 鈥揤
S
. Pad 4 (Shutdown) will shut off the
output stage when at least 90碌A(chǔ) is pulled from pad 4 to any
voltage at least 3 volts less positive than +V
S
(ground, for
example). When pad 3 is tied to pad 4 an over-temperature
condition will shut off the output stage until power is cycled
and the fault is removed. Normally pad 22 (I
Q
) is left open.
When pad 22 is tied to pad 23 the quiescent current in the
output stage is disabled. The result is lower quiescent but
class C biasing of the output stage.
CAUTION
PA45DIE is a MOSFET amplifier. ESD handling
procedures must be observed.
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifications
prodlit@apexmicrotech.com
APEX MICROTECHNOLOGY CORPORATION
鈥?TELEPHONE (520) 690-8600 鈥?FAX (520) 888-3329 鈥?ORDERS (520) 690-8601 鈥?EMAIL
are subject to change without notice.
PA45DIEU REV. A FEBRUARY 1998
漏 1998 Apex Microtechnology Corp.
219

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