the wireless IC company
PA2100 Dual-Band GSM Power Amplifier Module
Advance Information
HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained
in this datasheet is subject to change without prior notice. HiMARK Technology, Inc. assumes no responsibility for the
use of any circuits shown in this datasheet.
Description
The PA2100 is a Dual-Band Power Amplifier (PA) Multi-Chip Module (MCM) for use as
a final RF amplifier in GSM900 and DCS1800 hand-held digital cellular equipment and
other applications in the 880-to-915MHz and 1710-to-1785MHz bands. The device con-
sists of a PAIC manufactured on an advanced Gallium Arsenide (GaAs) Heterojunction
Bipolar Transistor (HBT) process, a CMOS current buffer, and off-chip passive compo-
nents for 50ohm input/output impedance match. The IC chip has two separate blocks, one
of which operates in the GSM900 band and the other in the DCS1800 band. The CMOS
current buffer minimizes the requisite power control current to as low as 60
碌A(chǔ)
. The die and
components are mounted on a laminate substrate and encapsulated with plastic molding to
minimize board space.
Features
Pr
el
Block Diagram
DCS_IN
Match
Power Control
Band Select
CMOS
Current
Buffer
GSM_IN
Match
Applications
Class 4 GSM900 and Class 1 DCS1800 Dual-Band Cellular Handsets
Commercial and Consumer Systems
Portable Battery-Powered Equipment
im
VCC
Match
DCS_OUTPUT
HBT
Match
GSM_OUTPUT
Single 2.9 to 4.8V Supply Voltage
+35dBm GSM Output Power at 3.5V
+32.5dBm DCS Output Power at 3.5V
55% GSM and 50% DCS Efficiency
Supports GSM and DCS
16-pin LCC package (9.1mm x 11.6mm)
in
ar
y
Page 1
January 2002
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