PA1186
6 Watt
800-960 MHz.
28v. GaAs Ultra Linear Power Amplifier
Features
(typical values)
High IP3 ............................................. +56.0 dBm.
Low NF ....................................................... 2.4 dB.
High Output Power ............................... +38 dBm.
Low Cost
Parame te r
Frequency
Gain
Gain Flatness
Pout @ 1dB. comp.
Noise Figure
ACPR (30kHz. BW)*
VSWR (Input/Output)
IP3 (two tone)**
Supply Required***
29.0
+/- 0.3
38.0
2. 4
- 50.0
1.5:1/2:1
+56.0
+28/1000
+50.0
+28/1200
2:1/2.5:1
dBm.
v./mA.
3
2 .5
2
1 .5
800
900
960
Typical Performance
--u-- 0擄C --n-- +25擄C --鈭?- +75擄C
Typical
Value
M in.
Value
8 00
27. 0
M a x.
Value
9 60
Units
MHz.
dB.
鹵dB.
G a in ( d B ) v s . F r e q u e n c y
36. 0
3.5
dBm.
dB.
dBc.
32
30
28
26
800
850
960
N F (d B ) v s . F r e q u e n c y
* 鹵850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+25dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin 3 (+V) to ground
Min and max values from 0 to 85 degrees C
P o u t (d B m ) v s . F re q u e n c y
40
39
38
37
36
800
880
960
Outline Drawings
See Attached Document
2 .5
2
1 .5
1
800
V S W R v s . F req u e n cy
In
Out
880
960
Maximum Ratings
Storage Temperature ....... -40擄C to +125擄C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90擄C
56
55
54
53
IP 3 (d B m ) v s . F r e q u e n c y
800
880
F r e q u e n c y in M H z .
960
Rev: 033001
Specifications subject to change without notice
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011
Fax. (215) 723-6015
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