PA1166
6 Watt
Amplifier
1930-1990 MHz.
28v. GaAs Ultra Linear Power
Features
(typical values)
High IP3 ............................................. +53.0 dBm.
Low NF ....................................................... 3.0 dB.
High Output Power ............................ +37.5 dBm.
Low Cost
Parame te r
Frequency
Gain
Gain Flatness
Pout @ 1dB. comp.
Noise Figure
ACPR (30kHz. BW)*
VSWR (Input/Output)
IP3 (two tone)**
Supply Required***
26.0
+/- 0.3
38
2. 7
- 54.0
1.5:1/2:1
+53.0
+28/1000
+48.0
+28/1200
2:1/3:1
dBm.
v./mA.
37
4. 0
Typical
Value
M in.
Value
19 3 0
23.0
M ax.
Value
1990
Units
MHz.
dB.
G a in ( d B ) v s . F r e q u e n c y
Typical Performance @+ 25擄C
dB.
dBm.
dB.
dBc.
N F (d B ) v s . F re q u e n c y
3
2 .5
2
1930
1950
1970
1990
2 6 .5
26
2 5 .5
25
1930
1950
1970
2400
* 鹵 850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+24dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin3 (+V) to ground
Min and max values from 0 to 85 degrees C
P o u t (d B m ) v s . F re q u e n c y
3 8 .5
3 7 .5
Outline Drawings
1930
1950
1970
1990
See Attached Document
2 .5
2
1 .5
1
V S W R v s . F re q u e n c y
In
O ut
1930
1950
1970
Maximum Ratings
Storage Temperature ....... -40擄C to +125擄C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90擄C
IP 3 ( d B m ) v s . F r e q u e n c y
54
53
52
51
50 930
1
1950
1970
1990
F r e q u e n c y in M H z .
Rev 040201
Specifications subject to change without notice
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011
Fax. (215) 723-6015
1
2
