PA1132
Features
(typical values)
1800-2000 MHz.
Linear Power Amplifier
High Frequency Operation. ..................... 2000 MHz.
High Output Power ................................ +33.0 dBm.
High IP3 ................................................ +48.0 dBm.
Low Cost
Typical Performance Curves
Electrical Specifications
Parame te r
Frequency
Gain
Gain Flatness
Reverse Isolation
Pout @ 1dB. comp.
Noise Figure
IP3
VSWR
Supply Req'd
2 2 .0
鹵
0.3
25
3 3 .0
3.0
+48.0
1.8:1
+12/725
+44.0
2.0:1
+12/850
v./mA.
32.0
4 .0
Typical
Value
(Referenced to 50
ohms)
0擄C
+25擄C
+85擄C
M in.
Value
18 0 0
20.0
M ax.
Value
2000
Units
G a in v s . F re q u e n c y
MHz.
dB.
23
22
21
20
1800
1850
1900
1950
2000
鹵
0.5
dB.
dB.
dBm.
dB.
dBm.
P out vs. Frequency
34
33
32
4
3 .5
3
2 .5
2
1800
1850
1900
1950
2000
N F vs. Frequency
IP3 measured with 2 tones @+20 dBm. per tone spaced 1 MHz. apart
Min and max values from 0 to 85 degrees C
1800
1850
1900
1950
2000
V S W R v s . F re q u e n c y
Outline Drawings
In
Out
1 .7 5
1 .2 5
1800
1850
1900
1950
2000
IP 3 v s . F r e q u e n c y
50
49
48
1800
1850
1900
1950
2000
F r e q u e n c y in M H z .
Maximum Ratings
Storage Temperature ............ -40C to +85C
DC Voltage ................................. +15 volts
RF Input Power .......................... +15 dBm.
Case Temperature ............................. +95C
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011
Fax. (215) 723-6015
Rev: 033001
`
Specifications subject to change without notice
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