NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
PA102FM
SOT-23
D
PRODUCT SUMMARY
V
(BR)DSS
-20
R
DS(ON)
118m惟
I
D
-3A
1 :GATE
2 :DRAIN
3 :SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
擄C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
C
= 25 擄C
T
C
= 70 擄C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
SYMBOL
V
DS
V
GS
LIMITS
-20
鹵12
-3
-1.4
UNITS
V
V
T
C
= 25 擄C
T
C
= 70 擄C
I
D
I
DM
P
D
T
j
, T
stg
A
-10
1.25
0.8
-55 to 150
擄C
UNITS
擄C / W
W
SYMBOL
R
胃JA
TYPICAL
MAXIMUM
166
Pulse width limited by maximum junction temperature.
Duty cycle
鈮?/div>
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
擄C,
Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State Resistance
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
V
GS
= 0V, I
D
= -250碌A(chǔ)
V
DS
= V
GS
, I
D
= -250碌A(chǔ)
V
DS
= 0V, V
GS
= 鹵12V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125 擄C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -2.5V, I
D
=-1A
V
GS
= -4.5V, I
D
= -2A
V
GS
= -10V, I
D
= -2A
-6
150
98
72
215
118
85
-20
-0.45 -0.8
-1.2
鹵100
-1
-10
A
m惟
nA
碌A(chǔ)
V
LIMITS
UNIT
MIN TYP MAX
Nov-02-2004
1
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