INFRARED DETECTOR
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
Detection capability up 5 碌m range (TE-cooled type)
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
Features
Applications
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
l
Lower temperature detection limit: 50 藲C approx.
l
High-speed response
l
Room temperature operation
l
Radiation thermometer
l
Flame detector
l
Gas analyzer
l
Film thickness gauge
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type
A3179
l
Heatsink for two-stage TE-cooled type
A3179-01
l
Temperature controller for TE-cooled type
C1103-04
l
Preamplifier for PbS/PbSe photoconductive detector C3757-02
l
Infrared detector module with preamp Non-cooled type P4245
Cooled type
P4639
s
Specification / Absolute maximum ratings
Type No.
Di mensional
Package
outline
Cooling
Absolute maximum ratings
Active Thermistor Thermistor TE-cooler
Operating Storage
Supply
temperature temperature
area resistance
power
current
voltage
Topr
Tstg
dissipation dissipation
(mm)
(mW)
(A)
(V)
(擄C)
(擄C)
(k鈩?
2脳2
-
-
-
3脳3
2脳2
2脳2
100
-30 to +50 -55 to +60
1.5
3脳3
9
0.2
2脳2
1.0
3脳3
P791-11
P791-13
P3207-05
P2038-02
P2038-03
P2680-02
P2680-03
鉃€
鉃?/div>
鉃?/div>
TO-5
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
TO-8
鉃?/div>
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
condition sensitivity Cut-off
Element wavelength wavelength
temperature
位c
位p
T
(擄C)
(碌m)
(碌m)
Photo sensitivity
S *
2
位=位p
Vs=15 V
D
鈭?/div>
(500, 600, 1)
Rise time
D
鈭?/div>
tr
(位p, 600, 1) 0 to 63 %
Max.
(碌s)
3
Dark
resistance
Rd
Type No.
P791-11
4.0
P791-13
25
4.8
4.3
P3207-05 *
1
P2038-02
-10
4.1
5.1
P2038-03
P2680-02
-20
4.2
5.2
P2680-03
*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
Typ.
Min.
Typ.
Min.
1/2
(V/W)
(V/W) (cm路 Hz /W) (cm路 Hz
1/2
/W) (c m路 Hz
1/2
/ W)
7 脳 10
2
1 脳 10
3
5 脳 10
7
1 脳 10
8
1 脳 10
9
2
2
3 脳 10
5 脳 10
7 脳 10
2
1 脳 10
3
-
-
8 脳 10
8
2.2 脳 10
3
3 脳 10
3
1 脳 10
8
3 脳 10
8
3 脳 10
9
1 脳 10
3
1.3 脳 10
3
2.7 脳 10
3
4 脳 10
3
2 脳 10
8
4 脳 10
8
4 脳 10
9
1.2 脳 10
3
2 脳 10
3
(M鈩?
0.3 to 1.5
1.7 to 7.0
5
1.8 to 8.0
1
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PbSe photoconductive detector
HAMAMATSU
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PbSe photoconductive detector
HAMAMATSU
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PbSe photoconductive detector
HAMAMATSU ...
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英文版
PbSe photoconductive detector
HAMAMATSU
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英文版
PbSe photoconductive detector
HAMAMATSU ...
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