INFRARED DETECTOR
InAs photovoltaic detector
P8079 series, P7163
High-speed, low noise photovoltaic IR detectors
InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and
lower noise.
Features
Applications
l
Thermoelectrically cooled type: high sensitivity
and high-speed response
l
Metal dewar type available for low light measurement
l
Long-wavelength cut-off of up to 3.8 碌m
l
Easy-to-use detector/preamp modules available
l
Gas analysis
l
Infrared radiation measurement
l
Infrared spectrophotometry
l
FTIR
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller
C1103-04
l
Infrared detector module with preamp
P4631-01 (P8079-21)
l
Custom amplifiers for InAs photovoltaic detector
I
Specifications / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
Package
Cooling
Active
area
(mm)
f1
Thermistor
power
dissipation
(mW)
-
0.2
-
P8079-01
TO-5
Non-cooled
鉃€
/S
P8079-11
One-stage TE-cooled
TO-8
鉃?/div>
/S
P8079-21
Two-stage TE-cooled
P7163
Metal dewer
LN
2
鉃?/div>
/S
* Window material S: sapphire glass
Absolute maximum ratings
Operating
Reverse
temperature
voltage
Topr
V
R
(V)
(擄C)
0.5
-40 to +60
Storage
temperature
Tstg
(擄C)
-55 to +60
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Photo
Measurement
Peak
Cut-off
sensitivity
condition
sensitivity
wavelength
S
Element
wavelength
temperature
lp
lc
l=lp
T
(擄C)
25
-10
-30
-196
(碌m)
3.45
3.30
3.25
3.00
(碌m)
3.8
3.6
3.5
3.1
(A/W)
1.1
1.3
Shunt
resistance
Rsh
(W)
10
80
200
1 脳 10
5
D
*
(lp, 1200, 1)
Typ.
Min.
1/2
(cm路Hz /W) (cm路Hz
1/2
/W)
1.5 脳 10
9
2 脳 10
9
7.5 脳 10
9
1 脳 10
10
1.5 脳 10
10
2 脳 10
10
3.5 脳 10
11
6 脳 10
11
NEP
l=lp
Type No.
Rise time
Terminal
tr
capacitance
V
R
=0 V
Ct
=50
W
V
R
=0 V
R
L
0 to 63 % f=1 MHz
(碌s)
0.1
0.1
(pF)
80
10
5
150
P8079-01
P8079-11
P8079-21
P7163
(W/Hz
1/2
)
4.4 脳 10
-11
8.9 脳 10
-12
4.4 脳 10
-12
1.5 脳 10
-13
1
1
2
3
4
