INFRARED DETECTOR
InSb photoconductive detector
P6606 series
Thermoelectrically cooled detectors capable of long-term measurements
Features
Applications
l
Thermoelectric cooling ensures high speed and high
l
Environment measurements (gas analysis, etc.)
sensitivity up to 6.5 碌m.
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Radiation thermometers (5 碌m band)
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Photoconductive element that changes electrical
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FTIR
resistance by input of IR radiation
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IR laser detection
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Easy-to-use detector/preamp modules are also available.
Accessories (optional)
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Heatsink for one-stage TE-cooled type A3179
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Heatsink for two-stage TE-cooled type A3179-01
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Heatsink for three-stage TE-cooled type A3179-04
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Temperature controller
C1103-05 (-75 to -25 藲C)
C1103-07 (-30 to +20 藲C)
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Preamp
C5185
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Infrared detector module with preamp
P4631-03 (P6606-310)
s
Specifications / Absolute maximum ratings
Type No.
Di m e nsional
outline/
Package
Window
material *
1
Absolute maximum ratings
Active Thermistor TE-cooler
Operating
Storage
Allowable
area
power
power
temperature temperature
Cooling
current
dissipation dissipation
Topr
Tstg
(mm)
(mW)
(A)
(mA)
(擄C)
(擄C)
One-stage TE-cooled
1.5
1脳1
40
Two-stage TE-cooled
1.0
0.5 脳 0.5
20
0.2
-40 to +60 -55 to +60
Three-stage TE-cooled 1 脳 1
1.0
40
2脳2
60
P6606-110
TO-8
鉃€
/S
P6606-210
P6606-305
TO-3
P6606-310
鉃?/div>
/S
P6606-320
*1: Window material S: Sapphire glass
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measure ment
Peak
Photo *
2
condition
Cut-off
sensitivity
sensitivity
Element wavelength wavelength
S
te m p erature
位c
位p
位=位p
T
D
鈭?/div>
(500, 1200, 1)
D
鈭?/div>
(位p, 1200, 1)
Rise time
tr
0 to 63 %
Dark
resistance
Rd
Type No.
Min.
Typ.
1/2
(擄C)
(碌m)
(碌m)
(V/W)
(cm路Hz /W) (cm路Hz
1/2
/W) (cm路Hz
1/2
/W)
(碌s)
(鈩?
P6606-110
-10
6.7
10
7 脳 10
7
2 脳 10
8
1 脳 10
9
20
8
8
9
P6606-210
-30
6.5
50
1.5 脳 10
5 脳 10
2.5 脳 10
25
9
9
10
P6606-305
5.5
2500
1 脳 10
2 脳 10
1 脳 10
0.4
150
9
9
10
-60
6.3
P6606-310
650
1 脳 10
2 脳 10
1 脳 10
80
150
5 脳 10
8
80
P6606-320
1 脳 10
9
5 脳 10
9
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
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