NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5506BVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
60
R
DS(ON)
55m惟
I
D
5.5A
D
4
:GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
擄C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
1
SYMBOL
V
DS
V
GS
LIMITS
60
鹵20
5.5
4.5
20
2.5
1.3
-55 to 150
UNITS
V
V
T
C
= 25 擄C
T
C
= 70 擄C
I
D
I
DM
A
T
C
= 25 擄C
T
C
= 70 擄C
P
D
T
j
, T
stg
W
擄C
SYMBOL
R
胃JA
TYPICAL
MAXIMUM
50
UNITS
擄C / W
Pulse width limited by maximum junction temperature.
Duty cycle
鈮?/div>
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
擄C,
Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
DS
= 0V, V
GS
= 鹵20V
V
DS
= 48V, V
GS
= 0V
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source
Resistance
1
On-State
I
DSS
I
D(ON)
V
DS
= 40V, V
GS
= 0V, T
J
= 55 擄C
V
DS
= 5V, V
GS
= 10V
V
GS
= 4.5V, I
D
= 4.5A
R
DS(ON)
g
fs
V
GS
= 10V, I
D
= 5.5A
V
DS
= 10V, I
D
= 5.5A
20
55
42
14
75
55
m惟
S
60
1.0
1.5
2.5
鹵100
1
10
碌A(chǔ)
A
V
nA
MIN
TYP MAX
UNIT
Forward Transconductance
1
1
SEP-30-2004
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