鈥?/div>
26dBm Output Power @6V
18dB Typical Gain
Small 2.49 x 1.4mm Die Size
Description
The P35-5122-000-200 is a high performance 8.5-10.5GHz Gallium Arsenide driver amplifier. This product is
intended for use in instrumentation, communications & electronic warfare applications.
The die is fabricated using Caswell Technology's 0.20碌m gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and reliability.
Electrical Performance
Ambient Temperature 22鹵3擄 C, Z
O
= 50鈩? Vd1 & Vd2 = 5V, Vg1 Set for Id1=100mA, Vg2 Set for Id2 = 170mA
Parameter
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at
1dB gain compression
Max (PAE)
Total circuit current
Gate Voltage; Vg1, Vg2
Conditions
8.5 鈥?10.5GHz
8.5 鈥?10.5GHz
8.5 鈥?10.5GHz
8.5 鈥?10.5GHz
8.5 鈥?10.5GHz
8.5 鈥?10.5GHz
Min
-
-
-
-
-
-
-
-
Typ
18
15
15
-
25
20
270
-0.4
Max
-
-
-
-
-
-
-
-
Units
dB
dB
dB
-
dBm
%
mA
V
Notes
1.
All parameters measured on wafer
Marconi Caswell Limited, Caswell, Towcester, Northamptonshire, NN12 8EQ
Telephone:
+ 44 (0) 1327 350581
Fax:
+ 44 (0) 1327 356775
Website:
www.caswelltechnology
.com
Caswell Technology is the trading name of Marconi Caswell Limited which is a wholly owned subsidiary of Marconi plc
The data and product specifications are subject to change without notice.
462/SM/02348/000 Issue 2
A Marconi company