鈥?/div>
20dB gain
3 dB Noise Figure
Description
This datasheet shows the performance of a 37 鈥?42GHz Gallium Arsenide Low Noise Amplifier. This product is
intended for use in fixed-point and point to point microwave systems. The LNA has a single drain supply, with
access to each of the gates to enable customer optimization.
The die is fabricated using Caswell Technology's 0.20碌m gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and reliability.
Electrical Performance
Ambient Temperature 22 鹵3 擄C, Z
O
= 50鈩? Vdd=2V, Vg1 & 2 set for Id1/2=12mA, Vg3 set for Id3=20mA U.O.S
Parameter
Small Signal Gain
Input Return Loss
Output Return Loss
Noise Figure
Stage 1 Drain Current
Stage 2 Drain Current
Stage 3 Drain Current
P1dB
IP3
Notes
All parameters measured on wafer
Conditions
37 鈥?40GHz
37 鈥?40GHz
37 鈥?40GHz
37 鈥?40GHz
By adjustment of Vg1
By adjustment of Vg2
By adjustment of Vg3
38GHz
38GHz
Min
18
6
6
Typ
20
10
10
3
12
12
20
8
20
4
Max
Units
dB
dB
dB
dB
mA
mA
mA
dBm
dBm
Marconi Caswell Limited, Caswell, Towcester, Northamptonshire, NN12 8EQ
Telephone:
+ 44 (0) 1327 350581
Fax:
+ 44 (0) 1327 356775
Website:
www.caswelltechnology
.com
Caswell Technology is the trading name of Marconi Caswell Limited which is a wholly owned subsidiary of Marconi plc
MCL reserves the right to update or change this specification without notice
462/SM/02703/200 Issue 1
A Marconi company