P35-4252-0
Marconi Optical Components
GaAs MMIC SP4T Reflective
Switch, DC - 4GHz
Features
路
路
路
路
路
Broadband performance
Low insertion loss; 0.7dB typ at 2GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Small die size; 0.67 mm2
Description
The P35-4252-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is suitable for use in
broadband communications and instrumentation applications. A 50W termination is presented at the isolated outputs of
the switch. The switch is controlled by the application of complimentary 0V/-5V or 0/-8V signals to the control lines in
accordance with the truth table below.
This die is fabricated using MOC's 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is also available packaged in a low-cost surface-mount
plastic package (see P35-4252-3).
Electrical Performance
Ambient temperature = 22鹵3擄C, ZO = 50鈩? Control voltages = 0V/-5V unless otherwise stated
Parameter
Insertion Loss1
Isolation1
Input Return Loss2
Output Return Loss2
1dB power compression point3
Conditions
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
0/-5V Control; 50MHz
0/-5V Control; 2GHz
0/-8V Control; 50MHz
0/-8V Control; 2GHz
50% Control to 10%90%RF
Min
-
-
25
20
25
23
25
23
-
-
-
-
-
Typ
0.7
1.1
30
22
27
24
27
24
19
22.5
21.5
30
3
Max
0.9
1.3
-
-
-
-
-
-
-
-
-
-
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
Switching Speed
Notes
1. Insertion Loss and Isolation measured between RF input and any output.
2. Return Loss measured in low loss switch state.
3. Input power at which insertion loss compresses by 1dB.
1
2
3
4
