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P35-4232-P01-200 Datasheet

  • P35-4232-P01-200

  • Interface IC

  • 4頁(yè)

  • ETC

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P35-4232-P01-200
Marconi Optical Components
GaAs MMIC SPDT Reflective
Switch, DC - 2GHz
Features
Broadband performance
Low insertion loss; 0.8dB typ at 1GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Positive or negative voltage operation
SO8 plastic package
Description
The P35-4232-P01-200 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is
suitable for use in broadband communications and instrumentation applications. A high impedance reflective termination
is presented at the isolated output of the switch. Control is effected by the application of complimentary 0V/-5V or 0/-8V
signals to the control lines in accordance with the truth table. Alternatively, positive control voltages may be used if the
Vref terminal is connected to the positive supply and decoupled to a good RF ground. In this case DC blocking capacitors
should be used in series with the input and output RF connections.
This die is fabricated using MOC's 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is packaged in a low-cost plastic package.
Electrical Performance
Ambient temperature = 22鹵3擄C , ZO = 50鈩? Control voltages = 0V/-5V unless otherwise stated
Parameter
Insertion Loss
Isolation
Input Return Loss1
Output Return Loss1
1dB power compression point2
Switching Speed
Conditions
DC - 1GHz
1 - 2GHz
DC - 1GHz
1 - 2GHz
DC - 1GHz
1 - 2GHz
DC - 1GHz
1 - 2GHz
0/-5V Control; 2GHz
0/-8V Control; 2GHz
50% Control to 10%90%RF
Min
-
-
25
20
22
12
25
12
15
23
-
Typ
0.8
1.0
27
22
25
15
30
15
33
36
3
Max
1.0
2.0
-
-
-
-
-
-
-
-
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
Notes
1. Return Loss measured in low loss switch state.
2. Input power at which insertion loss compresses by 1dB.

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