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P35-4229-000-200 Datasheet

  • P35-4229-000-200

  • Interface IC

  • 188.67KB

  • 4頁

  • ETC

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P35-4229-000-200
Marconi Optical Components
GaAs MMIC SPDT Reflective
Switch, DC - 20GHz
Features
路
路
路
路
路
Ultra Broadband
Low insertion loss 2.0dB typ at 18GHz
Fast switching speed
High isolation 45dB at 10GHz
Through GaAs Vias for improved performance
Description
The P35-4229-000-200 is a high performance Gallium Arsenide monolithic single pole double throw broadband RF switch.
It is suitable for use in broadband communications, instrumentation and electronic warfare applications. Control is
effected by the application of complimentary 0V and -5V levels to the control lines in accordance with the truth table
below.
The die is fabricated using MOC's 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability.
Electrical Performance
Ambient temperature = 22+/- 3擄C , ZO = 50鈩? Gate control voltage = 0V/-5V
Parameter
Insertion Loss
Conditions
DC - 10GHz
10GHz - 18GHz
18GHz - 20GHz
DC - 10GHz
10GHz - 18GHz
18GHz - 20GHz
DC - 20GHz
DC - 20GHz
Min
-
-
-
40
30
27
13
11
18
-
-
Typ
1.5
1.8
1.9
45
40
35
15
15
22
0V/-5V
5
Max
1.8
2.0
2.3
-
-
-
-
-
-
0V/-8V
10
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
Volts
ns
Isolation
Input Return Loss
Output Return Loss
Input Power at 1dB compression
Control Voltage
Switching speed
50% control to 10/90% RF

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