The P35-4227-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for
use in broadband communications and instrumentation applications. The RF outputs can be terminated with either a 50鈩?/div>
load or short circuit. The switch is controlled by the application of complimentary 0V/-5V or 0/-8V signals to the control
lines in accordance with the truth tables below. There is a choice of two line or four line control. Four line control allows
the use of an 'all-off' state.
This die is fabricated using MOC鈥檚 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is also available in a range of packages.
Electrical Performance
Ambient temperature = 22鹵3擄C , ZO = 50鈩?, Control voltages = 0V/-5V unless otherwise stated
Parameter
Conditions
Reflective
Min Typ Max
-
-
-
48
34
30
20
18
15
20
18
15
-
-
-
-
-
-
0.8
1.0
1.3
45
35
32
27
26
25
30
28
25
20
27
22
30
3
46
1.2
1.3
1.8
-
-
-
-
-
-
-
-
-
-
-
-
-
8
-
Terminated
Min Typ Max
-
-
-
48
34
30
20
18
15
20
18
15
-
-
-
-
-
-
0.7
0.9
1.2
55
40
33
24
20
18
24
24
20
21
27
22
30
3
46
1.2
1.3
1.6
-
-
-
-
-
-
-
-
-
-
-
-
-
8
-
Units
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
dBm
Insertion Loss
Isolation
Input Return Loss1
Output Return Loss1
1dB power
compression point2
Switching Speed
Third Order Intercept3
DC - 1GHz
1 - 4GHz
4 - 6GHz
DC - 1GHz
1 - 4GHz
4 - 6GHz
DC - 1GHz
1 - 4GHz
4 - 6GHz
DC - 1GHz
1 - 4GHz
4 - 6GHz
0/-5V Control; 50MHz
0/-5V Control;2GHz
0/-8V Control; 50MHz
0/-8V Control; 2GHz
50% Control to 10%90%RF
500MHz
Notes
1. Return Loss measured in low loss switch state.
2. Input power at which insertion loss compresses by 1dB.
3. Input power 10dBm/tone.
1
2
3
4
