P35-4215-0
Marconi Optical Components
GaAs MMIC SPDT
Reflective/Non-Reflective
Switch, DC - 4GHz
Features
路
路
路
路
路
Broadband performance
Low insertion loss; 0.5dB typ at 2GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Chip form
Description
The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch MMIC. It is
suitable for use in broadband communications and instrumentation applications. The isolated port of the switch can be
terminated with either an on-chip 50鈩?load or a short-circuit. Control is effected by the application of complimentary 0V
and -5V levels to the control lines in accordance with the truth table below.
This die is fabricated using MOCs 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is also available packaged in a hermetic 8-lead gullwing
flatpack (see P35-4215-1R & P35-4215-1T).
Electrical Performance
Ambient temperature = 22鹵3 擄C , ZO = 50鈩? Control voltages = 0V/-5V unless otherwise stated.
Parameter
Conditions
Reflective
Min Typ Max
-
-
32
26
15
10
15
10
-
-
-
-
-
-
0.5
0.9
34
28
25
20
25
20
21
23
25
31
3
46
0.6
1.0
-
-
-
-
-
-
-
-
-
-
-
-
Terminated
Min Typ Max
-
-
21
16
15
10
15
10
-
-
-
-
-
-
0.6
1.4
23
17
25
20
25
20
20
24
25
32
3
46
0.7
1.5
-
-
-
-
-
-
-
-
-
-
-
-
Units
-
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
dBm
Insertion Loss
Isolation
Input Return Loss1
Output Return Loss1
1dB power
compression point2
Switching Speed
Third Order Intercept3
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
DC - 2GHz
2 - 4GHz
0/-5V Control; 50MHz
0/-5V Control; 0.25 - 4GHz
0/-8V Control; 50MHz
0/-8V Control; 0.25 - 4GHz
50% Control to 10%90%RF
500MHz
Notes
1. Return Loss measured in low loss switch state
2. Input power at which insertion loss compresses by 1dB
3. Input power 10dBm/tone
1
2
3
4
