P35-4211-0
Marconi Optical Components
GaAs MMIC SPDT Reflective
Switch, DC - 3GHz
Features
路
路
路
路
路
Broadband performance
Low insertion loss; 0.5dB typ at 1GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Chip form
Description
The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use in
broadband communications and instrumentation applications. An open circuit reflective termination is presented at the
isolated output of the switch. Control is effected by the application of complimentary 0V and -5V levels to the control lines
in accordance with the truth table below.
This die is fabricated using MOC's 0.5碌m gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is also available in a plastic surface mount package (see
P35-4211-1).
Electrical Performance
Ambient temperature = 22 鹵 3擄C , ZO = 50鈩? Control voltages = 0V/-5V unless otherwise stated.
Parameter
Insertion Loss
Isolation
Input Return Loss1
Output Return Loss1
1dB power compression point2
Conditions
DC - 1GHz
1 - 3GHz
DC - 1GHz
1 - 3GHz
DC - 1GHz
1 - 3GHz
DC - 1GHz
1 - 3GHz
0/-5V Control; 50MHz
0/-5V Control; 1GHz
0/-8V Control; 50MHz
0/-8V Control; 1GHz
50% Control to 10%90%RF
500MHz
Min
-
-
25
15
18
15
18
15
19
28
21
30
-
-
Typ
0.5
0.9
26
18
20
19
20
19
20
29
22
31
3
47
Max
0.6
1.0
-
-
-
-
-
-
-
-
-
-
8
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
dBm
Switching Speed
Third Order Intercept3
Notes
1. Return Loss measured in low loss switch state
2. Input power at which insertion loss compresses by 1dB
3. Input power 10dBm/tone
1
2
3
4
