Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L-000019.3
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR
P2N2369A
TO - 92
Plastic Package
C
BE
LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T
a
=25潞C unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Collector Emitter Voltage ( V
BE
=0)
Emitter Base Voltage
Collector Current Peak
Power Dissipation @ Ta=25潞C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
R
th(j-a)
200
潞C/W
SYMBOL
V
CEO
V
CBO
V
CES
V
EBO
I
CM
P
D
T
j
, T
stg
VALUE
15
40
40
4.5
500
625
-65 to +200
UNIT
V
V
V
V
mA
mW
潞C
ELECTRICAL CHARACTERISTICS (T
a
=25潞C unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Current
Collector Emitter Saturation Voltage
SYMBOL
BV
CEO (sus)
*
BV
CES
BV
CBO
BV
EBO
I
CBO
I
CES
I
B
V
CE(sat)
*
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10碌A(chǔ), V
BE
=0
I
C
=10碌A(chǔ), I
E
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=20V, I
E
=0 Ta=150潞C
V
CE
=20V, V
BE
=0
V
CE
=20V, V
BE
=0
I
C
=10mA, I
B
=1mA
I
C
=30mA, I
B
=3mA
I
C
=100mA, I
B
=10mA
I
C
=10mA, I
B
=1mA
Ta=125潞C
VALUE
MIN
MAX
15
40
40
4.5
30
0.4
0.4
0.20
0.25
0.5
0.3
UNIT
V
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
V
V
Continental Device India Limited
Data Sheet
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