VISIBLE DETECTOR
CdS photoconductive cell
Resin coating 路 dual type
Low cost dual-element sensor with standard size
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light.
These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making
their operating circuits simple and small.
Dual-element sensors can be used to compare the signal from each element or perform signal processing by using a separation circuit.
Features
Applications
l
Thin substrate
l
Low price
l
Sensor for various control device
s
Absolute maximum ratings / Characteristics (Typ. Ta=25 擄C, unless otherwise noted, per 1 element)
Peak
Power Ambient
sensitivity
Supply
dissipation
temperature
Dimensional
wavelength
10
lx,
2856 K
voltage
P
Ta
outline
位p
Min.
Max.
(Vdc)
(mW)
(擄C)
(nm)
(k鈩?
(k鈩?
Absolute maximum ratings
Characteristics *
1
Resistance *
2
0
lx
*
3
Min.
(M鈩?
Response time 10
lx
*
5
Rise time Fall time
tr
tf
(ms)
120
50
(ms)
250
20
40
Type No.
緯
100
*
4
10
5R type
鉃€
P1395-01
50
25
550
5
15
0.1
-30 to +60
7R type
鉃?/div>
P2405
520
45
135
20
100
50
-30 to +60
鉃?/div>
P2478-01
530
25
75
1
*1: All characteristics are measured after exposure to light (100 to 500
lx)
for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after shutting off the 10
lx
light.
*4: Typical gamma characteristics (within 鹵0.10 variations) between 100
lx
to 10
lx
緯
100
=
10
log (R
100
) - log (R
10
)
log (E
100
) - log (E
10
)
100 to 10
lx
0.60
0.90
0.70
E
100
, E
10
: illuminance 100
lx,
10
lx
R
100
, R
10
: resistance at 100
lx
and 10
lx
respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully
illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.
1
2
