INFRARED DETECTOR
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
Detection capability up 5 碌m range (TE-cooled type)
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
Features
Applications
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
l
Lower temperature detection limit: 50 藲C approx.
l
High-speed response
l
Room temperature operation
l
Radiation thermometer
l
Flame detector
l
Gas analyzer
l
Film thickness gauge
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type
A3179
l
Heatsink for two-stage TE-cooled type
A3179-01
l
Temperature controller for TE-cooled type
C1103-04
l
Preamplifier for PbS/PbSe photoconductive detector C3757-02
l
Infrared detector module with preamp Non-cooled type P4245
Cooled type
P4639
I
Specification / Absolute maximum ratings
Type No.
P791-11
P791-13
P3207-05
P2038-02
P2038-03
P2680-02
P2680-03
Dimensional
Package
outline
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Cooling
TO-5
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
TO-8
Absolute maximum ratings
Active Thermistor Thermistor TE-cooler
Operating Storage
Supply
temperature
temperature
area resistance
power
current
voltage
dissipation dissipation
Topr
Tstg
(mm)
(mW)
(A)
(V)
(擄C)
(擄C)
(kW)
2脳2
-
-
-
3脳3
2脳2
2脳2
100
-30 to +50 -55 to +60
1.5
3脳3
9
0.2
2脳2
1.0
3脳3
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
condition
sensitivity
Cut-off
Element
wavelength
wavelength
temperature
lc
lp
T
(擄C)
(碌m)
(碌m)
Photo sensitivity
S*
l=lp
Vs=15 V
Min.
(V/W)
7 脳 10
3 脳 10
7 脳 10
2.2 脳 10
!
1 脳 10
!
2.7 脳 10
!
1.2 脳 10
!
Typ.
(V/W)
1 脳 10
!
5 脳 10
1 脳 10
!
3 脳 10
!
1 脳 10
!
4 脳 10
!
2 脳 10
!
D
*
(500, 600, 1)
Rise time
D
*
tr
(lp, 600, 1) 0 to 63 %
Max.
(碌s)
3
Dark
resistance
Rd
(MW)
0.3 to 1.5
1.7 to 7.0
1.8 to 8.0
Type No.
Typ.
Min.
1/2
(cm路 Hz /W) (cm路 Hz
1/2
/W)
(cm路 Hz
1/2
/W)
P791-11
4.0
5 脳 10
%
1 脳 10
&
1 脳 10
'
P791-13
25
4.8
4.3
P3207-05 *
-
-
8 脳 10
&
P2038-02
-10
4.1
5.1
1 脳 10
&
3 脳 10
&
3 脳 10
'
P2038-03
P2680-02
-20
4.2
5.2
2 脳 10
&
4 脳 10
&
4 脳 10
'
P2680-03
*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
5
1
1
2
3
4
