PROVISIONAL
SemiWell
Semiconductor
P10M40CT
Symbol
10A Schottky Barrier Rectifier
Features
1
!
Plastic material meets UL94V-0
Metal silicon junction
Very low forward voltage drop
High current / High surge capability
Guarding for over voltage protection
Lead solderable per MIL-STD202,method 208 guaranteed
Lead temperature for soldering purpose 250擄C Max
for 10 second
Weight : 2.2 gram (approximately)
b
:
!
2
3
!
b
:
TO-220
General Description
The P10M40CT schottky Rectifier has been designed for
applications requiring low forward voltage drop and switching
power supply, dc-dc converter, free-wheeling diode, battery
charging, polarity protection application.
1
2
3
Absolute Maximum Ratings
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
Eas
T
J
T
STG
Parameter
Repetitive Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Forward Current @ T
C
= 97擄C
Per Diode
Total Device
Value
40
40
5
10
175
3.5
- 65 ~ 125
- 65 ~ 150
Units
V
V
A
A
A
mJ
擄C
擄C
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions half sinewave,single phase, 60Hz)
Non-Repetitive Avalanche Energy @ T
C
=25擄C , Vdd = 15V , L=18uH
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Symbol
R
胃JC
Parameter
Maximum Thermal Resistance, Junction-to-Case ( per diode )
Value
3.0
Units
擄C/W
Nov, 2002. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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