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NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P01N02LMB

SOT-23 (M3)

D

PRODUCT SUMMARY

V

(BR)DSS

25V

R

DS(ON)

180m惟

I

D

1.2A

1. GATE

2. DRAIN

3. SOURCE

G

S

ABSOLUTE MAXIMUM RATINGS (T

C

= 25

擄C

Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

1

SYMBOL

V

GS

LIMITS

鹵15

1.2

1.0

12

0.6

0.5

-55 to 150

275

UNITS

V

T

C

= 25 擄C

T

C

= 100 擄C

I

D

I

DM

A

T

C

= 25 擄C

T

C

= 100 擄C

P

D

T

j

, T

stg

T

L

W

Operating Junction & Storage Temperature Range

Lead Temperature ( /

16

鈥?from case for 10 sec.)

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

1

1

擄C

SYMBOL

R

胃JC

R

胃JA

TYPICAL

MAXIMUM

65

230

UNITS

擄C / W

Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T

C

= 25 擄C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

1

LIMITS

UNIT

MIN TYP MAX

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(ON)

1

V

GS

= 0V, I

D

= 250

碌A(chǔ)

V

DS

= V

GS

, I

D

= 250

碌A(chǔ)

V

DS

= 0V, V

GS

= 鹵15V

V

DS

= 20V, V

GS

= 0V

V

DS

= 20V, V

GS

= 0V, T

J

= 125 擄C

V

DS

= 10V, V

GS

= 10V

V

GS

= 7V, I

D

= 1.2A

V

GS

= 10V, I

D

= 1.2A

V

DS

= 20V, I

D

= 1.2A

25

0.7

1.0

2.5

鹵250

25

250

1.2

220

180

16

250

220

V

nA

碌A(chǔ)

A

m惟

S

Drain-Source On-State Resistance

Forward Transconductance

1

R

DS(ON)

g

fs

1

AUG-18-2001

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