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P0102XX Datasheet

  • P0102XX

  • 71.62KB

  • 5頁

  • ETC

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廬
P01xxxA/B
SENSITIVE GATE SCR
FEATURES
I
T(RMS)
= 0.8A
V
DRM
= 100V to 400V
Low I
GT
< 1碌A(chǔ) max to < 200碌A(chǔ)
K
G
A
A
G
K
DESCRIPTION
The P01xxxA/B series of SCRs uses a high
performance planar PNPN technology. These
parts are intended for general purpose
applications where low gate sensitivity is required.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current
(180擄 conduction angle)
Mean on-state current
(180擄 conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25擄C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/碌s.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
2mm from case
Tl= 55擄C
Tl= 55擄C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Value
0.8
0.5
8
7
0.24
30
- 40, + 150
- 40, + 125
260
A
2
s
A/碌s
擄C
擄C
Unit
A
A
A
TO92
(Plastic)
P01xxxA
RD26
(Plastic)
P01xxxB
I
2
t
dI/dt
T
stg
T
j
Tl
Symbol
V
DRM
V
RRM
January 1995
Parameter
A
Repetitive peak off-state voltage
T
j
= 125擄C R
GK
= 1K鈩?/div>
100
Voltage
B
200
C
300
D
400
Unit
V
1/5

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