GaAlAs Infrared Emitter
OPE5794
The
OPE5794
is GaAlAs infrared emitting diode
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 plastic package
and has medium beam angle with lensed package
and cup frame
DIMENSIONS (Unit:mm)
3.0
3.8
4.6
0.3
5.4
0.8 Max
FEATURES
鈥?/div>
High-output power
鈥?/div>
Medium beam angle
鈥?/div>
Available for pulse operating
23.0 Min
2-鈻?.5
鈶?鈶?/div>
2.0
2.5
APPLICATIONS
鈶?/div>
Cathode
鈥?/div>
Optical emitters
鈥?/div>
Optical switches
鈥?/div>
Smoke sensors
鈥?/div>
IR remote control
鈥?/div>
IR sound transmission
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power dissipation
P
D
80
Forward current
I
F
60
Pulse forward current
I
FP
0.8
1
Reverse voltage
V
R
5.0
Operating temp.
Topr.
-20~ +70
Storage temp.
Tstg.
-20~ +80
2
Tsol.
240.
Soldering temp.
1
.Duty ratio = 1/100, pulse width=0.12ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Symbol
V
F
I
R
Ct
Ie
位
p
螖位
螖胃
Conditions
I
F
=40mA
V
R
= 5V
f = 1MHz
I
F
=40mA
I
F
= 40mA
I
F
= 40mA
I
F
=40mA
20
20
940
45
鹵17
Min.
Typ.
1.2
1.5
10
(Ta=25擄C )
Unit
鈶?/div>
Anode
A
擄C
擄C
擄C
(Ta=25擄C)
Max.
Unit
V
碌A(chǔ)
pF
next
OPE5794 產(chǎn)品屬性
1
GaAlAs
3.8mm
3.8mm
5.4mm
3 mm
LED
頂部安裝
通孔
940nm
20mW/sr
2
60mA
80mW
70°C
-20°C
1.5V
IrLED
IrLED
34°
5V
3x3x4.6mm
圓形
OPE5794相關(guān)型號PDF文件下載
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